//********************************************************************
//  Ver 1.0
//      2019.09.24   1、建立文件
//********************************************************************
#include	"config.h"

//字读取寄存器
INT8U   SH367306_ReadReg(INT8U Reg, INT16U *ptr)
{
    INT8U tValue[7];

    SH367306_I2cReadWord(Reg, (INT8U *) & (tValue[3]));
    tValue[0] = SH367306_ADDR;
    tValue[1] = Reg;
    tValue[2] = SH367306_ADDR | 0x01;
    tValue[6] = CRC8((INT8U *) & (tValue[0]), 5);
    if(tValue[5] == tValue[6])
    {
        *ptr = ((INT16U)(tValue[3]) << 8) | ((INT16U)(tValue[4])); //大端
        return(1);
    }

    return(0);
}

//字节写寄存器
void   SH367306_WriteReg(INT8U Reg, INT8U *ptr)
{
    INT8U tValue[4];

    tValue[0] = SH367306_ADDR;
    tValue[1] = Reg;
    tValue[2] = *ptr;
    tValue[3] = CRC8((INT8U *) & (tValue[0]), 3);

    SH367306_I2cWriteByte(Reg, (INT8U *) & (tValue[2]));
}

//读取状态标志
void   SH367306_ReadFlag(void)
{
    INT8U tValue[2];
    SH367306_ReadReg(ADDR_FLAG1, (INT16U *) & (tValue[0]));
#ifdef  _C51
    SH367306_Flag1 = tValue[0];
    SH367306_Flag2 = tValue[1];
#else
    SH367306_Flag1 = tValue[1];
    SH367306_Flag2 = tValue[0];
#endif
    if(SH367306_Flag1 != 0)
    {
        if(SH367306_FLAG_SC != 0)   //2019.11.27  增加短路锁定MOS功能
        {
            BATT_FetLock(DFET, Lock);
        }
        SH367306_CFG_LTCLR = 1; //清标志寄存器0
        SH367306_WriteReg(ADDR_SCONF1, &SH367306_Sconf1);
        SH367306_CFG_LTCLR = 0; //清标志寄存器0
        SH367306_WriteReg(ADDR_SCONF1, &SH367306_Sconf1);
    }
    //SH367306_ReadReg(ADDR_FLAG2, (INT16U *)&(tValue[0]));
    SH367306_ReadReg(ADDR_BSTATUS, (INT16U *) & (tValue[0]));
#ifdef  _C51
    SH367306_Bstatus = tValue[0];
#else
    SH367306_Bstatus = tValue[1];
#endif
}

//中断配置
#if 0
void   SH367306_IntConfig(INT8U Value)
{
    INT8U tValue[2];
    SH367306_WriteReg(ADDR_INTEN, &Value);
    SH367306_ReadReg(ADDR_INTEN, (INT16U *) & (tValue[0]));
    SH367306_IntEn = tValue[0];
}
#endif

//芯片进掉电模式
//先写0x33到寄存器SCONF10，再将SCONF1的PDEN修改为1，关闭LDO
void   SH367306_PowerDown(void)
{
    SH367306_Sconf10 = 0x33;
    SH367306_CFG_PDEN = ENABLE;
    SH367306_WriteReg(ADDR_SCONF10, &SH367306_Sconf10);
    SH367306_WriteReg(ADDR_SCONF1,  &SH367306_Sconf1);
    SH367306_Sconf10 = 0;
}

//初始化FLASH数据
void   SH367306_FlashInfoInit(void)
{
    //看门狗配置
    //WDTEN=1,WDTT=WDT_10S
    //SH367306_CFG_WDTEN=ENABLE;
    //SH367306_CFG_WDTT=WDT_10S;
    //复位信号输出配置
    //RESET=1,RSTT=RST_1S
    //SH367306_CFG_RESET=ENABLE;
    //SH367306_CFG_RSTT=RSTT_1S;

    //	SH367306_Flag1=0;
    //	SH367306_Flag2=0;
    //	SH367306_Bstatus=0;

    //报警信号中断，默认打开所有中断
    SH367306_IntEn = 0;
    SH367306_INT_TWI = DISABLE;
    SH367306_INT_WDT = ENABLE;
    SH367306_INT_VADC = DISABLE;
    SH367306_INT_CADC = DISABLE;
    SH367306_INT_CD = ENABLE;
    SH367306_INT_OV = ENABLE;
    SH367306_INT_SC = ENABLE;
    //系统检测功能，
    SH367306_Sconf1 = 0;
    SH367306_CFG_CHGREN = DISABLE;
    SH367306_CFG_LOADEN = DISABLE;
    SH367306_CFG_OVEN = ENABLE;
    SH367306_CFG_SCEN = ENABLE;
    SH367306_CFG_WDTEN = ENABLE;
    SH367306_CFG_PDEN = DISABLE;
    SH367306_CFG_CTLDEN = DISABLE;
    SH367306_CFG_LTCLR = DISABLE;
    //充电、放电MOS由硬件保护模块决定
    SH367306_Sconf2 = 0;
    SH367306_CFG_CHGC = DISABLE;
    SH367306_CFG_DSGC = DISABLE;
    SH367306_CFG_ALARMC = ENABLE;
    SH367306_CFG_RESET = ENABLE;
    //ADC转换设置
    SH367306_Sconf3 = 0;
    SH367306_CFG_SCANC = VADC_100mS;
    SH367306_CFG_VADCC = ENABLE;
    SH367306_CFG_VADCEN = ENABLE;
    SH367306_CFG_CBITC = ENABLE;
    SH367306_CFG_CADCM = ENABLE;
    SH367306_CFG_CADCEN = ENABLE;
    //均衡功能，默认全部关闭
    SH367306_Sconf4 = 0x00;
    SH367306_Sconf5 = 0x00;
    //短路检测电压、短路保护延时，复位低电平时间，电流检测范围设置
    SH367306_Sconf6 = 0;
    SH367306_CFG_SCT = SCT_100uS;
    SH367306_CFG_SCV = SCV_300mV;
    SH367306_CFG_RSTT = RSTT_1S;
    SH367306_CFG_RSNS = RSNS_100mV;
    //硬件过充延时、充放电检测阈值选择，看门狗溢出时间
    SH367306_Sconf7 = 0;
    SH367306_CFG_WDTT = WDTC_10S;
    SH367306_CFG_CHS = CHS_12mV;
    SH367306_CFG_OVT = OVT_8T;
    //过充电压设置
    SH367306_Sconf8 = (INT8U)((4300 * 100UL / 586UL) >> 8);
    SH367306_Sconf9 = (INT8U)((4300 * 100UL / 586UL) >> 0);
    //
    SH367306_Sconf10 = 0;
}

//初始化芯片
void   SH367306_ChipInit(void)
{
    INT8U tValue[2];

    do
    {
        SH364306_ResetHigh();
        DELAY_Ms(200);
        SH364306_ResetHigh();
        DELAY_Ms(200);
        SH367306_WriteReg(ADDR_SCONF1,  &SH367306_Sconf1);
        DELAY_Ms(100);
        SH367306_Flag1 = 0;
#ifdef  _C51
        tValue[0] = 0x55;
#else
        tValue[1] = 0x55;
#endif
        SH367306_ReadReg(ADDR_SCONF1, (INT16U *) & (tValue[0]));
#ifdef  _C51
        SH367306_Flag1 = tValue[0];
#else
        SH367306_Flag1 = tValue[1];
#endif
    }
    while(SH367306_Sconf1 != SH367306_Flag1);
    SH367306_Flag1 = 0;
    SH367306_WriteReg(ADDR_SCONF1,  &SH367306_Sconf1);
    SH367306_WriteReg(ADDR_SCONF2,  &SH367306_Sconf2);
    SH367306_WriteReg(ADDR_SCONF3,  &SH367306_Sconf3);
    SH367306_WriteReg(ADDR_SCONF4,  &SH367306_Sconf4);
    SH367306_WriteReg(ADDR_SCONF5,  &SH367306_Sconf5);
    SH367306_WriteReg(ADDR_SCONF6,  &SH367306_Sconf6);
    SH367306_WriteReg(ADDR_SCONF7,  &SH367306_Sconf7);
    SH367306_WriteReg(ADDR_SCONF8,  &SH367306_Sconf8);
    SH367306_WriteReg(ADDR_SCONF9,  &SH367306_Sconf9);
    SH367306_WriteReg(ADDR_SCONF10, &SH367306_Sconf10);
}

//配置MOS状态
void   SH367306_Mosfet(INT8U Fet, INT8U NewState)
{
    INT8U tValue[2];
    SH367306_ReadReg(ADDR_SCONF2, (INT16U *) & (tValue[0])); //读取配置寄存器状态
#ifdef _C51
    SH367306_Sconf2 = tValue[0];
#else
    SH367306_Sconf2 = tValue[1];
#endif
    if(NewState == DISABLE)
    {
        if(Fet & SH367306_CFET)
        {
            SH367306_CFG_CHGC = 0;
        }
        if(Fet & SH367306_DFET)
        {
            SH367306_CFG_DSGC = 0;
        }
    }
    else
    {
        if(Fet & SH367306_CFET)
        {
            SH367306_CFG_CHGC = 1;
        }
        if(Fet & SH367306_DFET)
        {
            SH367306_CFG_DSGC = 1;
        }
    }
    SH367306_WriteReg(ADDR_SCONF2, &SH367306_Sconf2);
    BATT_FLAG_DFET = SH367306_CFG_DSGC;
    BATT_FLAG_CFET = SH367306_CFG_CHGC;
}

//操作均衡MOS,6串的均衡使能与8串的均衡使能冲突
void    SH367306_Balance(INT16U BalanceMask)
{
    //移位处理低位没有使用的电芯连接
    BalanceMask = BalanceMask << (SH367306_CELL_MAX - CELL_SIZE_CHIP0);

    SH367306_Sconf5 = (INT8U)((BalanceMask) & 0x1f);    //高5位
    SH367306_Sconf4 = (INT8U)((BalanceMask >> 5) & 0x1f); //低5位
    BATT_FLAG_BALF ^= 0x02;
    if(BATT_FLAG_BALF & 0x02)		//第6串与第8串轮流均衡，修正此bug
    {
        if(SH367306_CFG_CB8 != 0)
        {
            SH367306_CFG_CB6 = 0;
        }
    }
    else if(SH367306_CFG_CB6 != 0)
    {
        SH367306_CFG_CB8 = 0;
    }
    SH367306_WriteReg(ADDR_SCONF4, &SH367306_Sconf4);
    SH367306_WriteReg(ADDR_SCONF5, &SH367306_Sconf5);
}


//休眠时检查MOS状态，防止出现死锁的情况
void    SH367306_FetCheck(void)
{
    //充电MOS和放电MOS同时关闭，或者无过充标志置位，打开充电MOS
    if(((SH367306_CFG_CHGC == 0) &&      \
            (SH367306_CFG_DSGC == 0)) ||    \
            (BATT_FLAG_OV == 0))
    {
        BATT_FetLock(CFET, UnLock);
        SH367306_Mosfet(SH367306_CFET, ENABLE);
    }
}

//读取电芯电压
void    SH367306_ReadCellVoltage(void)
{
    INT8U   i, j;

    SH367306_VcMask = CELL_MASK_CHIP0; //复制芯片0的参数到相应的寄存器缓冲区

    for (i = 0, j = 0; i < SH367306_CELL_MAX; i++)
    {
        if (SH367306_VcMask & (1UL << i))
        {
            SH367306_ReadReg((ADDR_CellV + i * 2), &(SH367306_Vc[j]));
            BATT_Vc[j] = (ADCGAIN_BYTE * SH367306_Vc[j]) >> 12; // / 4096;
            j++;
        }
    }
}

//BQ769x0读取温度传感器数据
void    SH367306_ReadCellTemp(void)
{
    INT8U   i, j;

    SH367306_TsMask = NTC_MASK_CHIP0;

    for (i = 0, j = 0; i < 4; i++)
    {
        if (SH367306_TsMask & (1UL << i)) //显示温度为最后一个有效温度点的温度
        {
            SH367306_ReadReg((ADDR_CellT + i * 2), &(SH367306_Ts[j]));
            if(i < 2)
            {
                BATT_Ts[j] = NTC_Temperature((SH367306_Ts[j]), ADC_SH36730x);
            }
            else
            {
                BATT_Ts[j] = (SH367306_Ts[j] * 17) / 100 - 270;
            }
            j++;
        }
    }
    //芯片只使用1个NTC，接在NTC2位置，其他位置贴电阻，
    //BATT_Ts[0]=BATT_Ts[1];
    //BATT_Ts[2]=BATT_Ts[1];
    //BATT_Ts[3]=BATT_Ts[1];
}

//SH367306读取电流值,电流单位10mA
//I=1000*CUR/(65536*Rsense)
//I=CUR*BATT_CC_GAIN*RSNS_Tab[SH367306_CFG_RSNS]
//BATT_CC_GAIN=1000*1000*1000/(65536*Rsense)=15258/Rsense
__FLASH INT8S RSNS_Tab[] = {8, 4, 2, 1};
void    SH367306_ReadCellCurrent(void)
{
    INT32S tCurrent;
    INT8U   tRSNS = 0;

    //默认情况下设置为0-400mV档位，
    //CC_BYTE = SH367306_ReadReg(ADDR_CC);
    SH367306_ReadReg(ADDR_CC, (INT16U *)&SH367306_CC);
    if(SH367306_CC & 0x1000)
    {
        SH367306_CC |= 0xe000;
    }
    else
    {
        SH367306_CC &= 0x0fff;
    }
    tCurrent = SH367306_CC - SH367306_CcOffset;
    tCurrent = tCurrent * SH367306_CcGain * RSNS_Tab[SH367306_CFG_RSNS];
    //BATT_Current=CC_BYTE-BATT_Info.PACK.CC_Offset;
    //BATT_Current = BATT_Current * BATT_CC_GAIN * RSNS_Tab[SH367306_CFG_RSNS];
    //20mA无指示
    if((tCurrent > -2000) && (tCurrent < 2000)) tCurrent = 0;

    BATT_Current = tCurrent / 100;

    if((BATT_Current < 8000) && (BATT_Current > -8000))   //8A切换到50mV档, 50/5=10A
    {
        tRSNS = RSNS_50mV;
    }
    else if((BATT_Current < 16000) && (BATT_Current > -16000))   //16A切换到100mV档，100/5=20A
    {
        tRSNS = RSNS_100mV;
    }
    else if((BATT_Current < 32000) && (BATT_Current > -32000))   //32A切换到200mV档，200/5=40A
    {
        tRSNS = RSNS_200mV;
    }
    else    //32A切换到200mV档，200/5=40A
    {
        tRSNS = RSNS_400mV;
    }

    if(tRSNS != SH367306_CFG_RSNS)
    {
        SH367306_CFG_RSNS = tRSNS;
        SH367306_WriteReg(ADDR_SCONF6,  &SH367306_Sconf6);
    }

}

void    SH367306_Init(void)
{
    INT8U i = 20;

    SH367306_FlashInfoInit();
    SH367306_I2cInit();
    SH367306_GpioInit();
    SH367306_ChipInit();
    while(i--)
    {
        BATT_ReadInfo();
        DELAY_Ms(20);
    }
    BATT_CellVoltageProcess();

}

void    SH367306_ResetChip(void)
{
    SH364306_ResetLow();
    DELAY_Ms(500);
    SH364306_ResetHigh();
    SH367306_Init();
}

/*
INT8U   AFE_UartInfoProcess(void)
{
    if(BATT_Info.Uart.Crc == CRC8((INT8U *)&(BATT_Info.Uart), (sizeof(SH367306_UART_Str)-2)))
    {
        //复制电压数据
        MEM_Copy((INT8U *)&(BATT_Info.Uart.Vx[0]), (INT8U *)&(BATT_Info.INFO.CELL_V[CELL_SIZE_CHIP0]), BATT_Info.Uart.CellNum*2);
        //复制外部温度数据
        MEM_Copy((INT8U *)&(BATT_Info.Uart.Tx[0]), (INT8U *)&(BATT_Info.INFO.CELL_T[NTC_SIZE_CHIP0/2]), BATT_Info.Uart.TemNum*2);
        //复制芯片温度数据
        MEM_Copy((INT8U *)&(BATT_Info.Uart.Tx[2]), (INT8U *)&(BATT_Info.INFO.CHIP_T[NTC_SIZE_CHIP0/2]), BATT_Info.Uart.TemNum*2);
    }
    return(1);
}

INT8U   AFE_UartInfoFill(void)
{
    BATT_Info.Uart.Addr=1;
    BATT_Info.Uart.Id=1;
    BATT_Info.Uart.CellNum=CELL_SIZE_CHIP1;
    BATT_Info.Uart.TemNum=NTC_SIZE_CHIP0/2;
    //复制电压数据
    MEM_Copy((INT8U *)&(BATT_Info.INFO.CELL_V[0]), (INT8U *)&(BATT_Info.Uart.Vx[0]), BATT_Info.Uart.CellNum*2);
    //复制温度数据
    MEM_Copy((INT8U *)&(BATT_Info.INFO.CELL_T[0]), (INT8U *)&(BATT_Info.Uart.Tx[0]), BATT_Info.Uart.TemNum*2);
    //复制芯片温度数据
    MEM_Copy((INT8U *)&(BATT_Info.INFO.CHIP_T[0]), (INT8U *)&(BATT_Info.Uart.Tx[2]), BATT_Info.Uart.TemNum*2);

    BATT_Info.Uart.Crc=CRC8((INT8U *)&(BATT_Info.Uart), (sizeof(SH367306_UART_Str)-2));

    return(1);
}
*/