#include "EEPROM.H"        



const APP_VER RUNAPPVer __at(RunAPPInfoAddr); 
const APP_VER NEWAPPVer __at(NewAPPInfoAddr); 


unsigned short PrintBuf[SECTOR_SIZE>>1]={0};     //写入EEPROM缓冲区
u16 EEHalfWord_Read(u32 EEAddr) 
{                      
    return *(vu16*)EEAddr;
}

void EESector_Erase(u32 EEAddr)  
{    
    EEAddr=EEAddr/(SECTOR_SIZE)*(SECTOR_SIZE);
    FLASH_ErasePage(EEAddr);  
}

                                                     
void EEHalfWord_Write(u32 EEAddr,u16 EEData)   
{                                        
    FLASH_ProgramHalfWord( EEAddr, EEData)  ;  
}

//pBuf  结构体首指针
//cLen  结构体长度
//iAddr 保存地址偏移,相对于保存扇区首地址的偏移
uint32_t EEWriteStruct(void* pBuf,uint32_t cLen,uint32_t iAddr)     
{
    uint32_t result = 0;
    u32 i,j,k,ProtectedPages; 
    u32  Addr;
    u32  iLen       = cLen>>1;       //双字节个数
    u32  cBufCnt   ; 
    if(cLen==0) return result;
    //开始保存的地址
    Addr        = iAddr/(SECTOR_SIZE)*(SECTOR_SIZE);         //起始保存的扇区首地址
    iAddr      %= (SECTOR_SIZE);                             //相对扇区的偏移       
    cBufCnt    = (cLen+iAddr)/(SECTOR_SIZE)                   //需要写几次?              
                    +(((cLen+iAddr)%(SECTOR_SIZE))>0?1:0);   //不足一个算一个         //要写入几次? 
    
    
    i = j = k = ProtectedPages = 0;
    if(0!=iAddr%2)                        //没有两字节对其,退出              
        return result;
        //全部锁定则退出编程
    Flash_ProtectMode(&ProtectedPages );  //
    if(0==ProtectedPages)
        return result;
    for(j=0;j<cBufCnt;j++)
    {
    //将目标扇区读出
        int ReadCnt = (SECTOR_SIZE>>1);
        for(i=0;i<ReadCnt;i++)
            PrintBuf[i] = EEHalfWord_Read(Addr+SECTOR_SIZE*j+(i<<1));
    //将结构体写入目标缓冲      
        for(i=(j==0?(iAddr>>1):0),k=0;i<(SECTOR_SIZE>>1);i++,k++) 
        {
            PrintBuf[i] = *((vu16*)pBuf+k);                //
            if(--iLen==0)
            {  
                __nop();
                break;
            }     
        }    
        //讲缓冲写入扇区
        //擦除Flash区 
        FLASH_Unlock();
        EESector_Erase(Addr+j*SECTOR_SIZE);                                //擦除扇区
        //写入内容;
        for(i=0;i<SECTOR_SIZE>>1;i++)
        {
             EEHalfWord_Write(Addr+(SECTOR_SIZE)*j+(i<<1),PrintBuf[i]);   
        }           
        FLASH_Lock();
        result = 0xFF;
    }
    return result;
}
 

void  EEReadStruct(void* pBuf,uint32_t cLen,uint32_t Addr)
{
    uint32_t i; 
    uint16_t *pcBuf = (uint16_t *)pBuf;
    cLen>>=1;
    for(i=0;i<cLen;i++)
    {
        pcBuf[i]=EEHalfWord_Read(Addr+(i<<1));
    }
} 

void Flash_ProtectMode(u32 *ProtectedPages)
{
    vu32 WRPR_Value;
    FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP|FLASH_FLAG_PGERR |FLASH_FLAG_WRPRTERR);

      /* Get pages write protection status */
    WRPR_Value = FLASH_GetWriteProtectionOptionByte();
    *ProtectedPages = WRPR_Value & 0x000000C0;

#ifdef WriteProtection_Disable
    if (ProtectedPages == 0x00)
    {// Pages are write protected  

        // Disable the write protection 
        FLASHStatus = FLASH_EraseOptionBytes();

        // Generate System Reset to load the new option byte values  
        NVIC_GenerateSystemReset();
      }
#else
     #ifdef WriteProtection_Enable 
    if (ProtectedPages != 0x00)
    {    
        // Pages not write protected  
        #ifdef USE_STM3210B_EVAL
        // Enable the pages write protection  
        FLASHStatus = FLASH_EnableWriteProtection(FLASH_WRProt_Pages24to27 |FLASH_WRProt_Pages28to31);    
        #else   
        // Enable the pages write protection  
        FLASHStatus = FLASH_EnableWriteProtection(FLASH_WRProt_Pages12to13 |FLASH_WRProt_Pages14to15);
        #endif
        // Generate System Reset to load the new option byte values  
        NVIC_GenerateSystemReset();
    }
    #endif
#endif
}